Description
VESA (FDMI): 100 x 100 mm
Operating current: 250mA
Velegnet til reparationsarbejde på præcisionsenheder
Måler aktiv effekt i henhold til EN61036
BSS8402DW-7-F Transistor - N/P-MOSFET, 60/-50V (SOT363) Vognmand VESA (FDMI): 100 x 100Tekniske detaljer: Producent: DIODES INCORPORATED Type transistor: N P MOSFET Polarisation: unipolar Drain source spnding: 60 50V Drain strm: 0. 115 0. 13A Effekt: 0. 2W Hus: SOT363 Gate source spnding: 20V On state modsgtand: 10 13. 5? Montage: SMD Specifications: Manufacturer: DIODES INCORPORATED Type of transistor: N P MOSFET Polarisation: unipolar Drain source voltage: 60 50V Drain current: 0. 115 0. 13A Power: 0. 2W Case: SOT363 Gate source
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